NCEP0135AK TO-252 N-Channel Field-Effect Transistor, New Stock

This N-Channel Field-Effect Transistor is designed to efficiently manage and control electrical currents in your electronic applications. Encased in a TO-252 package, it offers optimal performance with low on-resistance and high-speed switching capabilities. Supporting a variety of voltage and current requirements, this transistor is ideal for power management, amplifying or switching applications in numerous electronic devices. Whether you're upgrading existing circuits or designing new ones, this component provides reliability and improved efficiency to meet your needs in modern electronics. FET Type: N-channel Drain-Source Voltage (Vdss): 100V Drain Current (Id): 35A Drain-Source On-Resistance (RDS On): 22mΩ Gate-Source Voltage (Vgs): ±20 V Gate Charge (Qg): 26nC Maximum Power Dissipation: standard Maximum Power Consumption: 110W Manufacture country: China Instructions included: No